Gallium Oxide (Ga₂O₃): A Next-Generation Semiconductor Material
Gallium oxide (Ga₂O₃) is an emerging ultra-wide bandgap (UWBG) semiconductor material gaining attention in the fields of power electronics, optoelectronics, and high-frequency devices. With superior properties like high breakdown voltage, wide bandgap, and chemical stability, it is poised to revolutionize high-power and high-efficiency electronic applications.
What is Gallium Oxide?
Gallium oxide is an inorganic compound composed of gallium and oxygen, most commonly found in the monoclinic β-phase (β-Ga₂O₃), which is the most thermodynamically stable form. It is a wide bandgap semiconductor, meaning it requires a large amount of energy to excite electrons from the valence to the conduction band.
Chemical formula: Ga₂O₃
Bandgap: ~4.8 to 5.0 eV (β-Ga₂O₃)
Crystal Structure: Monoclinic
Thermal Stability: High, up to 1800°C